Positive chemically amplified resists using naphthoquinone diazides as photo-acid-generators.

3-D Diffusion Models for Chemically-Amplified Resists Using Massively Parallel Processors

Three-dimensional concentration dependent diffusions and simultaneous chemical reactions in chemically-amplified photoresists are simulated. Fickian, a linearly increasing diffusivity and an exponentially increasing diffusivity due to free volume increase with T-BOC are considered. Two different grid to processor mappings are proposed in implementing the simulator on massively parallel processo...

Acid-Quencher Reaction-Diffusion during the Post-Exposure Bake of Chemically Amplified Resists Part 1: Initially linear concentration profiles

High aspect ratio micro/nano machining with proton beam writing on aqueous developable – easily stripped negative chemically-amplified resists

Proton beam writing (PBW) is a new direct-writing process that uses a focused beam of MeV protons to pattern resist material at nano dimensions. PBW has the unique ability to maintain a straight path through 50 lm thick resist films, and is suitable for high aspect ratio micro(nano)-machining. TADEP resist is a new promising high aspect ratio chemically-amplified resist that can be developed in...

Calibration of Chemically Amplified Resist Models

Synthesis of New Ladder Cyclic Materials (Noria Derivatives) with Photo-Reactive Groups and Their Application to EUV-Resists, EB-Resists and Photo-Curable Materials

ABSTRACT Noria derivatives containing protective groups such as t-BOC group, t-butyl ester group (t-BAc), adamantyl group (Ad) were synthesized and evaluated as alkaline developable positive-type EBand EUV-resists. As the result, it was cleared that Noria-t-BOC and Noria-t-BAc showed 50 nm and 70 nm resolutions as EB-resists, respectively. Noria-Ad also showed clear line and space pattern with ...